Download the BLF988S datasheet PDF.
This datasheet also covers the BLF988 variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.
General Description
A 600 W LDMOS RF power transistor for transmitter applications and industrial applications.
The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.
Table 1.
Key Features
Excellent ruggedness (VSWR 40 : 1 through all phases).
Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W.
High power gain.
High efficiency.
Designed for broadband operation (400 MHz to 1000 MHz).
Internal input matching for high gain and optimum broadband operation.
Full PDF Text Transcription for BLF988S (Reference)
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BLF988S. For precise diagrams, and layout, please refer to the original PDF.
BLF988; BLF988S Power LDMOS transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for trans...
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le 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information Test signal f (MHz) PL(AV) (W) PL(M) (W) Gp D IMD3 (dB) (%) (dBc) RF performance in a common source 860 MHz narrowband test circuit 2-tone, class-AB pulsed, class-AB f1 = 860; f2 = 860.1 860 250 - 20.8 46 32 - 600 19.8 58 - 1.2 Features and benefits Excellent ruggedness (VSWR 40 : 1 through all phases) Optimum thermal behavior and reliability, Rth(j-c) = 0.
BLF988S Datasheet
