BLF6H10LS-160 transistor equivalent, power ldmos transistor.
* Integrated ESD protection
* Excellent ruggedness
* High power gain
* High efficiency
* Excellent reliability
* Easy power control
* Low Rth .
The transistor can deliver 160 W from 729 MHz to 960 MHz. The excellent ruggedness and broadband performance of this de.
A 160 W LDMOS RF power transistor for base station applications. The transistor can deliver 160 W from 729 MHz to 960 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for base station applications.
Table 1. Typic.
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