Download the BLF6H10LS-160 datasheet PDF.
This datasheet also covers the BLF6H10L-160 variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.
General Description
A 160 W LDMOS RF power transistor for base station applications.
The transistor can deliver 160 W from 729 MHz to 960 MHz.
The excellent ruggedness and broadband performance of this device makes it ideal for base station applications.
Key Features
Integrated ESD protection.
Excellent ruggedness.
High power gain.
High efficiency.
Excellent reliability.
Easy power control.
Low Rth providing excellent thermal stability.
Low output capacitance for wideband performance in Doherty applicati.
Full PDF Text Transcription for BLF6H10LS-160 (Reference)
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BLF6H10LS-160. For precise diagrams, and layout, please refer to the original PDF.
BLF6H10L-160; BLF6H10LS-160 Power LDMOS transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 160 W LDMOS RF power transist...
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roduct profile 1.1 General description A 160 W LDMOS RF power transistor for base station applications. The transistor can deliver 160 W from 729 MHz to 960 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for base station applications. Table 1. Typical performance RF performance at VDS = 50 V in a common-source Class-AB test circuit. Test signal f IDq VDS PL(AV) Gp (MHz) (mA) (V) (W) (dB) 2-carrier W-CDMA 960 600 50 38 20 D (%) 34 [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01% probability on CCDF. ACPR (dBc) 32[1] 1.
BLF6H10LS-160 Datasheet
