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BLF6H10L-160; BLF6H10LS-160
Power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
A 160 W LDMOS RF power transistor for base station applications. The transistor can deliver 160 W from 729 MHz to 960 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for base station applications.
Table 1. Typical performance
RF performance at VDS = 50 V in a common-source Class-AB test circuit.
Test signal
f
IDq
VDS PL(AV)
Gp
(MHz)
(mA) (V) (W)
(dB)
2-carrier W-CDMA
960
600 50 38
20
D (%) 34
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01% probability on CCDF.
ACPR (dBc) 32[1]
1.
BLF6H10L-160 Datasheet
