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BLF647P
Broadband power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
A 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications.
Table 1. Application information
RF performance at Th = 25 C in a common source test circuit.
Test signal
f
VDS IDq PL(AV)
(MHz)
(V) (A) (W)
Pulsed, class-B 1300
32 0.1 -
CW, class-B
1300
32 0.1 200
2-tone, class-AB f1 = 1299.95; f2 = 1300.05 32 0.7 75
PL(M) (W) 200 -
Gp (dB) 18 18 19
D IMD3 (%) (dBc) 70 70 48 33
1.
BLF647P Datasheet
