Datasheet4U Logo Datasheet4U.com

BLF6G13LS-250PG - Power LDMOS transistor

Download the BLF6G13LS-250PG datasheet PDF. This datasheet also covers the BLF6G13L-250P variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

Description

250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz.

Table 1.

Typical RF performance at Tcase = 25 C; IDq = 100 mA; in a class-AB production test circuit.

Features

  • Easy power control.
  • Integrated ESD protection.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Internally matched for ease of use.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLF6G13L-250P-Ampleon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BLF6G13LS-250PG
Manufacturer Ampleon
File Size 394.98 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF6G13LS-250PG Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BLF6G10-45 Power LDMOS Transistor NXP
BLF6G10L-40BRN Power LDMOS transistor NXP Semiconductors
BLF6G10LS-135R Power LDMOS transistor NXP Semiconductors
BLF6G10LS-200 Power LDMOS transistor NXP Semiconductors
BLF6G10LS-200R Power LDMOS transistor NXP Semiconductors

Other Datasheets by Ampleon

Part Number Description
BLF6G13LS-250P Power LDMOS transistor
BLF6G13L-250P Power LDMOS transistor
BLF6G10-200RN Power LDMOS transistor
BLF6G10LS-200RN Power LDMOS transistor
BLF6G15L-500H Power LDMOS transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BLF6G13L-250P; BLF6G13LS-250P(G) Power LDMOS transistor Rev. 5. — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Table 1. Test information Typical RF performance at Tcase = 25 C; IDq = 100 mA; in a class-AB production test circuit. Test signal f VDS PL(1dB) Gp D (GHz) (V) (W) (dB) (%) CW 1.3 50 250 17 56 1.2 Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Internally matched for ease of use  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.
Published: |