Download the BLF182XRS datasheet PDF.
This datasheet also covers the BLF182XR variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.
General Description
A 250 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
Table 1.
Key Features
Easy power control.
Integrated double sided ESD protection.
Excellent ruggedness.
High efficiency.
Excellent thermal stability.
Designed for broadband operation (HF to 600 MHz).
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3.
Full PDF Text Transcription for BLF182XRS (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BLF182XRS. For precise diagrams, and layout, please refer to the original PDF.
BLF182XR; BLF182XRS Power LDMOS transistor Rev. 3 — 3 February 2016 Product data sheet 1. Product profile 1.1 General description A 250 W extremely rugged LDMOS power tra...
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ofile 1.1 General description A 250 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1. Application information Test signal f (MHz) pulsed RF 108 CW 81.36 VDS PL (V) (W) 50 250 50 235 Gp (dB) 28 28 D (%) 75 82 1.2 Features and benefits Easy power control Integrated double sided ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (HF to 600 MHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.
BLF182XRS Datasheet
