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BLC9G22XS-400AVT Datasheet, Ampleon

BLC9G22XS-400AVT transistor equivalent, power ldmos transistor.

BLC9G22XS-400AVT Avg. rating / M : 1.0 rating-13

datasheet Download (Size : 712.91KB)

BLC9G22XS-400AVT Datasheet
BLC9G22XS-400AVT Avg. rating / M : 1.0 rating-13

datasheet Download (Size : 712.91KB)

BLC9G22XS-400AVT Datasheet

Features and benefits


* Excellent ruggedness
* High efficiency
* Low thermal resistance providing excellent thermal stability
* Lower output capacitance for improved performanc.

Application

at frequencies from 2110 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an as.

Description

400 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2110 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit..

Image gallery

BLC9G22XS-400AVT Page 1 BLC9G22XS-400AVT Page 2 BLC9G22XS-400AVT Page 3

TAGS

BLC9G22XS-400AVT
Power
LDMOS
transistor
Ampleon

Manufacturer


Ampleon

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