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BLC9G20XS-160AV
Power LDMOS transistor
Rev. 3 — 24 May 2017
Product data sheet
1. Product profile
1.1 General description
160 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty demo test circuit. VDS = 30 V; IDq = 300 mA (main); VGS(amp)peak = 0.7 V, unless otherwise specified.
Test signal
f
VDS PL(AV)
Gp
D
ACPR
(MHz)
(V) (W)
(dB) (%)
(dBc)
1-carrier W-CDMA
1805 to 1880
30 28
16.6 47
30 [1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01% probability on CCDF per carrier.
1.
BLC9G20XS-160AV Datasheet
