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BLC9G20XS-550AVT
Power LDMOS transistor
Rev. 3 — 24 November 2017
Product data sheet
1. Product profile
1.1 General description
550 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit. VDS = 28 V; IDq = 1100 mA (main); VGS(amp)peak = 0.7 V, unless otherwise specified.
Test signal
f
VDS
PL(AV)
Gp
D
ACPR
(MHz)
(V)
(W)
(dB) (%)
(dBc)
1-carrier W-CDMA
1805 to 1880
28
85
15.4
44.5
34 [1]
[1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.6 dB at 0.01 % probability on CCDF.
1.
BLC9G20XS-550AVT Datasheet
