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BLC9G22LS-160VT
Power LDMOS transistor
Rev. 2 — 24 May 2017
Product data sheet
1. Product profile
1.1 General description
160 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2200 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB demo application.
Test signal
f
IDq VDS PL(AV) Gp D ACPR
(MHz)
(mA) (V) (W)
(dB) (%)
(dBc)
2-carrier W-CDMA
2110 to 2170 864 28 35
18.4 33
31 [1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz.
1.
BLC9G22LS-160VT Datasheet
