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BLC9G22LS-120VT
Power LDMOS transistor
Rev. 1 — 14 July 2017
Product data sheet
1. Product profile
1.1 General description
120 W LDMOS power transistor with enhanced video bandwidth for base station applications at frequencies from 2110 MHz to 2180 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
IDq
VDS PL(AV) Gp
D
ACPR5M
(MHz)
(mA) (V) (W)
(dB) (%)
(dBc)
2-carrier W-CDMA
2110 to 2180
700 28 30
18.1 31
32.5 [1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier; 5 MHz carrier spacing.
1.
BLC9G22LS-120VT Datasheet
