BLC9G20LS-160PV - Power LDMOS transistor

160 W LDMOS power transistor with enhanced video bandwidth for base station applications at frequencies from 1805 MHz to 2000 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB demo test circuit.

• Excellent ruggedness.
• High efficiency.
• Low thermal resistance providing excellent thermal stability.
• Decoupling leads to enable enhanced video bandwidth performance (70 MHz typical).
• Designed for broadband operation (1805 MHz to 2000 MHz).
• Lower output capacitance for improved performance in Doherty ap.