BLC8G27LS-210PV - Power LDMOS transistor

200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

• Excellent ruggedness.
• High efficiency.
• Low thermal resistance providing excellent thermal stability.
• Decoupling leads to enable improved video bandwidth performance (150 MHz typical).
• Designed for broadband operation (2500 MHz to 2700 MHz).
• Lower output capacitance for improved performance i.