Datasheet4U Logo Datasheet4U.com

AO3416L - N-Channel MOSFET

Description

The AO3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

It is ESD protected.

Features

  • VDS (V) = 20V ID = 6.5 A RDS(ON) < 22mΩ (VGS = 4.5V) RDS(ON) < 26mΩ (VGS = 2.5V) RDS(ON) < 34mΩ (VGS = 1.8V) ESD Rating: 2000V HBM TO-236 (SOT-23) Top View G D S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±8 6.5 5.2 30 1.4 0.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AO3416 N-Channel MOSFET Kexin
AO3416 N-Channel MOSFET VBsemi
AO3416A N-Channel MOSFET UMW
AO3411 P-Channel MOSFET Freescale
AO3414 N-Channel MOSFET Kexin

Other Datasheets by Alpha & Omega Semiconductors

Part Number Description
AO3416 20V N-Channel MOSFET
AO3410 N-Channel MOSFET
AO3413 20V P-Channel MOSFET
AO3414 20V N-Channel MOSFET
AO3414L N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Rev 2: Nov 2004 AO3416, AO3416L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor General Description The AO3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. AO3416L ( Green Product ) is offered in a lead-free package. Features VDS (V) = 20V ID = 6.5 A RDS(ON) < 22mΩ (VGS = 4.5V) RDS(ON) < 26mΩ (VGS = 2.5V) RDS(ON) < 34mΩ (VGS = 1.