Datasheet4U Logo Datasheet4U.com

AO3413 - 20V P-Channel MOSFET

General Description

The AO3413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS = -20V ID = -3A RDS(ON) < 80mW RDS(ON) < 100mW RDS(ON) < 130mW (VGS = -4.5V) (VGS =- 4.5V)-15 (VGS = -2.5V) (VGS = -1.8V) SOT23 Top View Bottom View D D D S G G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current A TA=25°C TA=70°C ID Pulsed Drain Current B IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -20 ±8 -3 -2.

📥 Download Datasheet

Full PDF Text Transcription for AO3413 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AO3413. For precise diagrams, and layout, please refer to the original PDF.

AO3413 20V P-Channel MOSFET General Description The AO3413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages ...

View more extracted text
e excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Features VDS = -20V ID = -3A RDS(ON) < 80mW RDS(ON) < 100mW RDS(ON) < 130mW (VGS = -4.5V) (VGS =- 4.5V)-15 (VGS = -2.5V) (VGS = -1.8V) SOT23 Top View Bottom View D D D S G G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current A TA=25°C TA=70°C ID Pulsed Drain Current B IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -