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AO3416A - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 20V.
  • ID = 6 A (VGS = 4.5V).
  • RDS(ON) < 25mΩ (VGS = 4.5V).
  • RDS(ON) < 33mΩ (VGS = 2.5V).
  • RDS(ON) < 51mΩ (VGS = 1.8V) UMW AO3416A N-Channel MOSFET SOT.
  • 23 1. GATE 2. SOURCE D 3. DRAIN G S.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta=25℃ Ta=70℃ Pulsed Drain Current Power Dissipation Ta=25℃ Ta=70℃ Thermal Resistance. Junction- to-Ambient t≤10sec Steady State Thermal R.

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Datasheet Details

Part number AO3416A
Manufacturer UMW
File Size 2.72 MB
Description N-Channel MOSFET
Datasheet download datasheet AO3416A Datasheet

Full PDF Text Transcription for AO3416A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AO3416A. For precise diagrams, and layout, please refer to the original PDF.

UMW R ■ Features ● VDS (V) = 20V ● ID = 6 A (VGS = 4.5V) ● RDS(ON) < 25mΩ (VGS = 4.5V) ● RDS(ON) < 33mΩ (VGS = 2.5V) ● RDS(ON) < 51mΩ (VGS = 1.8V) UMW AO3416A N-Channel M...

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3mΩ (VGS = 2.5V) ● RDS(ON) < 51mΩ (VGS = 1.8V) UMW AO3416A N-Channel MOSFET SOT–23 1. GATE 2. SOURCE D 3. DRAIN G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta=25℃ Ta=70℃ Pulsed Drain Current Power Dissipation Ta=25℃ Ta=70℃ Thermal Resistance.Junction- to-Ambient t≤10sec Steady State Thermal Resistance.Junction-to-Foot Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA RthJF TJ Tstg Rating 20 ±8 6 5 30 1.4 0.9 90 125 80 150 -55 to 150 Unit V A W ℃/W ℃ www.umw-ic.