Full PDF Text Transcription for AO3414A (Reference)
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AO3414A. For precise diagrams, and layout, please refer to the original PDF.
RDS(ON) 57m (VGS = 1.8V) UMW AO3414A N-Channel Enhancement MOSFET SOT–23 1. GATE 2. SOURCE 3. DRAIN Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain-Source Voltage VDS 20 Gate-Source Voltage VGS 8 Continuous Drain TA=25 Current *1 TA=70 4.2 ID 3.2 Pulsed Drain Current *2 IDM 15 Power Dissipation *1 TA=25 TA=70 1.4 PD 0.9 Themal Resistance.Junction-to-Ambient *1 RthJA 125 Themal Resistance.Junction-to-Case RthJC 80 Junction and Storage Temperature Range TJ, TSTG -55 to 150 *1The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25 Unit
AO3414A Datasheet
