-30V/-20A,RDS(ON)= 9.8mΩ@VGS=-10V -30V/-15A,RDS(ON)=14mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design Application Power S.

Pin Description ( TO-220-3L ) AFP6679S 30V P-Channel Enhancement Mode MOSFET Features -30V/-20A,RDS(ON)= 9.8mΩ@VGS=-10.

AFP6679S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

AFP6405WS

AFP6801

AFP02N8-000

AFP02N8-212

AFP02N8-213

AFP1013

AFP1013E

AFP1023

AFP1023E

AFP1033

AFP1033E

AFP1073

AFP1073E

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