-30V/-3.8A,RDS(ON)=135mΩ@VGS=-10.0V -30V/-2.8A,RDS(ON)=175mΩ@VGS=-4.5V -30V/-1.8A,RDS(ON)=245mΩ@VGS=-2.5V Super high density cell design for extremely low RDS (ON) Except.

Pin Description ( TSOP-6 ) AFP6801 30V P-Channel Enhancement Mode MOSFET Features -30V/-3.8A,RDS(ON)=135mΩ@VGS=-10.0V .

AFP6801, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other bat.

AFP6405WS

AFP6679S

AFP02N8-000

AFP02N8-212

AFP02N8-213

AFP1013

AFP1013E

AFP1023

AFP1023E

AFP1033

AFP1033E

AFP1073

AFP1073E

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