AFP1013E mosfet equivalent, p-channel mosfet.
-20V/-0.6A, RDS(ON)= 800 mΩ@ VGS =-4.5V -20V/-0.5A, RDS(ON)= 950 mΩ@ VGS =-2.5V -20V/-0.4A, RDS(ON)= 1250 mΩ@ VGS =-1.8V Low Offset (Error) Voltage Low-Voltage Operation .
Pin Description ( SOT-523 )
AFP1013E
20V P-Channel Enhancement Mode MOSFET
Features
-20V/-0.6A, RDS(ON)= 800 mΩ@ VGS =.
AFP1013E, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-.
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