-20V/-0.6A, RDS(ON)= 800 mΩ@ VGS =-4.5V -20V/-0.5A, RDS(ON)= 950 mΩ@ VGS =-2.5V -20V/-0.4A, RDS(ON)= 1250 mΩ@ VGS =-1.8V Low Offset (Error) Voltage Low-Voltage Operation .

Pin Description ( SOT-563 ) AFP1023E 20V P-Channel Enhancement Mode MOSFET Features -20V/-0.6A, RDS(ON)= 800 mΩ@ VGS =.

AFP1013E, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-.

AFP1023

AFP1013

AFP1013E

AFP1033

AFP1033E

AFP1073

AFP1073E

AFP1303

AFP1413

AFP1427

AFP1433

AFP1441

AFP1601E

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