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AFP6405WS - P-Channel MOSFET

Download the AFP6405WS datasheet PDF. This datasheet also covers the AFP6405WS-Alfa variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFP6405WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Key Features

  • -30V/-5.0A,RDS(ON)=54mΩ@VGS=-10.0V -30V/-4.0A,RDS(ON)=75mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP-6 package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFP6405WS-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFP6405WS
Manufacturer Alfa-MOS
File Size 541.33 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP6405WS Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFP6405WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TSOP-6 ) AFP6405WS 30V P-Channel Enhancement Mode MOSFET Features -30V/-5.0A,RDS(ON)=54mΩ@VGS=-10.0V -30V/-4.0A,RDS(ON)=75mΩ@VGS=-4.