-20V/-6.5A,RDS(ON)=40mΩ@VGS=4.5V -20V/-4.5A,RDS(ON)=54mΩ@VGS=2.5V -20V/-2.5A,RDS(ON)=75mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) SOP-8P packag.

Pin Description ( SOP-8P ) AFP4933WS 20V P-Channel Enhancement Mode MOSFET Features -20V/-6.5A,RDS(ON)=40mΩ@VGS=4.5V -.

AFP4933WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial i.

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