-30V/ -7.2A,RDS(ON)=24mΩ@VGS=-10V -30V/ -5.8A,RDS(ON)=32mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application LED Disp.

Pin Description ( SOP-8P ) AFP4925W 30V P-Channel Enhancement Mode MOSFET Features -30V/ -7.2A,RDS(ON)=24mΩ@VGS=-10V -.

AFP4925W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

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