AFP4925WS datasheet, mosfet equivalent, Alfa-MOS

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Features and benefits

-30V/ -8.0A,RDS(ON)=18mΩ@VGS=-10V -30V/ -6.0A,RDS(ON)=26mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application LED Disp.

Application

Pin Description ( SOP-8P ) AFP4925WS 30V P-Channel Enhancement Mode MOSFET Features -30V/ -8.0A,RDS(ON)=18mΩ@VGS=-10V .

Description

AFP4925WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial i.

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