-20V/-9A,RDS(ON)=26mΩ@VGS=4.5V -20V/-8A,RDS(ON)=34mΩ@VGS=2.5V -20V/-6A,RDS(ON)=82mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) SOP-8P package desi.

Pin Description ( SOP-8P ) AFP4403W 20V P-Channel Enhancement Mode MOSFET Features -20V/-9A,RDS(ON)=26mΩ@VGS=4.5V -20V.

AFP4403W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

AFP4401WS

AFP4425WS

AFP4435W

AFP4435WS

AFP4447

AFP4535W

AFP4599W

AFP4637W

AFP4925W

AFP4925WS

AFP4933WS

AFP4943WS

AFP4948W

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