* -30V/-13A,RDS(ON)=12mΩ@VGS=-10V
* -30V/-10A,RDS(ON)=16.5mΩ@VGS=-4.5V
* Super high density cell design for extremely low RDS (ON)
* SOP-8P package design.

Pin Description ( SOP-8P ) AFP4425WS 30V P-Channel Enhancement Mode MOSFET Features
* -30V/-13A,RDS(ON)=12mΩ@VGS=-.

AFP4425WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial i.

AFP4401WS

AFP4403W

AFP4435W

AFP4435WS

AFP4447

AFP4535W

AFP4599W

AFP4637W

AFP4925W

AFP4925WS

AFP4933WS

AFP4943WS

AFP4948W

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