-40V/ -10A,RDS(ON)= 40mΩ@VGS= -10V -40V/ -8A,RDS(ON)= 55mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Back.

Pin Description ( TO-252-2L ) AFP4447 40V P-Channel Enhancement Mode MOSFET Features -40V/ -10A,RDS(ON)= 40mΩ@VGS= -10.

AFP4447, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.

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