-40V/-6.2A,RDS(ON)= 35mΩ@VGS= -10V -40V/-5.2A,RDS(ON)= 50mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application Backli.

Pin Description ( SOP-8P ) AFP4535W 40V P-Channel Enhancement Mode MOSFET Features -40V/-6.2A,RDS(ON)= 35mΩ@VGS= -10V .

AFP4535W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

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