AFP2925W mosfet equivalent, p-channel enhancement mode mosfet.
z -20V/-3.6A,RDS(ON)=50mΩ@VGS=-4.5V z -20V/-3.2A,RDS(ON)=63mΩ@VGS=-2.5V z -20V/-1.2A,RDS(ON)=84mΩ@VGS=-1.8V z Super high density cell design for extremely low RDS (ON) z .
Pin Description ( DFN2X2-6L )
Features
z -20V/-3.6A,RDS(ON)=50mΩ@VGS=-4.5V z -20V/-3.2A,RDS(ON)=63mΩ@VGS=-2.5V z -20V/.
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