AFP2913W mosfet equivalent, p-channel enhancement mode mosfet.
z -25V/-4.5A,RDS(ON)=120mΩ@VGS=-10V z -25V/-3.8A,RDS(ON)=155mΩ@VGS=-4.5V z Super high density cell design for extremely
low RDS (ON) z Exceptional on-resistance and maxim.
Pin Description ( DFN2X2-6L )
AFP2913W
25V P-Channel Enhancement Mode MOSFET
Features
z -25V/-4.5A,RDS(ON)=120mΩ@VGS=-.
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