AFP2913W Datasheet, Alfa-MOS

z -25V/-4.5A,RDS(ON)=120mΩ@VGS=-10V z -25V/-3.8A,RDS(ON)=155mΩ@VGS=-4.5V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maxim.

Pin Description ( DFN2X2-6L ) AFP2913W 25V P-Channel Enhancement Mode MOSFET Features z -25V/-4.5A,RDS(ON)=120mΩ@VGS=-.