z -25V/-4.5A,RDS(ON)=120mΩ@VGS=-10V z -25V/-3.8A,RDS(ON)=155mΩ@VGS=-4.5V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maxim.

Pin Description ( DFN2X2-6L ) AFP2913W 25V P-Channel Enhancement Mode MOSFET Features z -25V/-4.5A,RDS(ON)=120mΩ@VGS=-.

AFP2913W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other ba.

AFP2911W

AFP2923W

AFP2925W

AFP2125S

AFP2301AS

AFP2303A

AFP2303AS23RG

AFP2307A

AFP2309A

AFP2311

AFP2311A

AFP2317

AFP2319A

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