AFP2911W datasheet, mosfet equivalent, Alfa-MOS

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Features and benefits

z -20V/-4.5A,RDS(ON)=80mΩ@VGS=-4.5V z -20V/-3.8A,RDS(ON)=105mΩ@VGS=-2.5V z -20V/-2.5A,RDS(ON)=145mΩ@VGS=-1.8V z Super high density cell design for extremely low RDS (ON) .

Application

Pin Description ( DFN2X2-6L ) AFP2911W 20V P-Channel Enhancement Mode MOSFET Features z -20V/-4.5A,RDS(ON)=80mΩ@VGS=-4.

Description

AFP2911W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other ba.

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