AFP2303A mosfet equivalent, p-channel mosfet.
* -30V/-4.0A,RDS(ON)=90mΩ@VGS=-10.0V
* -30V/-2.8A,RDS(ON)=125mΩ@VGS=-4.5V
* Super high density cell design for extremely
low RDS (ON)
* Exceptional on-res.
Pin Description ( SOT-23 )
AFP2303A
30V P-Channel Enhancement Mode MOSFET
Features
* -30V/-4.0A,RDS(ON)=90mΩ@VGS=-.
AFP2303A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
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