-40V/-3.6A,RDS(ON)=52mΩ@VGS=-10.0V -40V/-3.2A,RDS(ON)=67mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC cu.

Pin Description ( SOT-23-3L ) AFP2317 40V P-Channel Enhancement Mode MOSFET Features -40V/-3.6A,RDS(ON)=52mΩ@VGS=-10.0.

AFP2317, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.

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