AFP2317 Datasheet, Alfa-MOS

-40V/-3.6A,RDS(ON)=52mΩ@VGS=-10.0V -40V/-3.2A,RDS(ON)=67mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC cu.

Pin Description ( SOT-23-3L ) AFP2317 40V P-Channel Enhancement Mode MOSFET Features -40V/-3.6A,RDS(ON)=52mΩ@VGS=-10.0.