AFP2309A mosfet equivalent, 60v p-channel mosfet.
* ID=-1.8A,RDS(ON)=190mΩ@VGS=-10V
* ID=-1.6A,RDS(ON)=230mΩ@VGS=-4.5V
* Super high density cell design for extremely
low RDS (ON)
* Exceptional on-resistan.
Pin Description ( SOT-23 )
AFP2309A
60V P-Channel Enhancement Mode MOSFET
Features
* ID=-1.8A,RDS(ON)=190mΩ@VGS=-1.
AFP2309A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
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