AFP1810 datasheet, mosfet equivalent, Alfa-MOS

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Features and benefits

-100/-2.0A,RDS(ON)= 230mΩ@VGS= -10V -100/-1.0A,RDS(ON)= 245mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application Full.

Application

Pin Description ( SOP-8P ) AFP1810 100V P-Channel Enhancement Mode MOSFET Features -100/-2.0A,RDS(ON)= 230mΩ@VGS= -10V.

Description

AFP1810, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.

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