z -100/-5.0A,RDS(ON)= 95mΩ@VGS= -10V z -100/-3.5A,RDS(ON)= 105mΩ@VGS= -4.5V z Super high density cell design for extremely low RDS (ON) z SOP-8P package design Applicati.

Pin Description ( SOP-8P ) AFP1806WS 100V P-Channel Enhancement Mode MOSFET Features z -100/-5.0A,RDS(ON)= 95mΩ@VGS= -.

AFP1806WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial i.

AFP1800WS

AFP1810

AFP1013

AFP1013E

AFP1023

AFP1023E

AFP1033

AFP1033E

AFP1073

AFP1073E

AFP1303

AFP1413

AFP1427

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