AFN7960AS datasheet, mosfet equivalent, Alfa-MOS

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Features and benefits

60V/12A,RDS(ON)= 20mΩ@VGS=10V 60V/10A,RDS(ON)= 24mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) DFN 5X6-8L package design Application Motor and Lo.

Application

Pin Description ( DFN5X6-8L ) Features 60V/12A,RDS(ON)= 20mΩ@VGS=10V 60V/10A,RDS(ON)= 24mΩ@VGS=4.5V Super high density.

Description

AFN7960AS, Dual N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS (ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commer.

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