AFN7002DS - 60V N-Channel MOSFET

Alfa-MOS

Download the AFN7002DS datasheet PDF. This datasheet also covers the AFN7002DS-Alfa variant, as both devices belong to the same 60v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFN7002DS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

60V/0.5A,RDS(ON)=3000mΩ@VGS=10V.
60V/0.3A,RDS(ON)=4000mΩ@VGS=5V.
Low Offset (Error) Voltage.
Low-Voltage Operation.
High-Speed Circuits.
Low Battery Voltage Operation.
ESD ( 1KV ) Protected.
SOT-363 package design.

📥 Download Datasheet

AFN7002DS 60v n-channel mosfet by Alfa-MOS - Datasheet Preview — Note: The manufacturer provides a single datasheet file (AFN7002DS-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	AFN7002DS
Manufacturer	Alfa-MOS
File Size	265.77 KB
Description	60V N-Channel MOSFET
Datasheet	AFN7002DS Datasheet

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Other Datasheets by Alfa-MOS

Part Number	Description
AFN7002AS	N-Channel MOSFET
AFN7002ES	N-Channel MOSFET
AFN7002KAS	N-Channel MOSFET
AFN7002LDS	N-Channel MOSFET
AFN7002LKAS	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Alfa-MOS Technology General Description AFN7002DS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-363 ) AFN7002DS 60V N-Channel Enhancement Mode MOSFET Features  60V/0.5A,RDS(ON)=3000mΩ@VGS=10V  60V/0.