60V/0.5A , RDS(ON)=3000mΩ@VGS=10V 60V/0.3A , R DS(ON)=4000mΩ@VGS=5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC cur.

Pin Description ( SOT-23 ) AFN7002AS 60V N-Channel Enhancement Mode MOSFET Features 60V/0.5A , RDS(ON)=3000mΩ@VGS=10V .

AFN7002AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other b.

AFN7002DS

AFN7002ES

AFN7002KAS

AFN7002LDS

AFN7002LKAS

AFN7106S

AFN7308S

AFN7400

AFN7402

AFN7412

AFN7412S

AFN7420

AFN7424S

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