40V/18A,RDS(ON)=14mΩ@VGS=10V 40V/15A,RDS(ON)=16mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capa.

Pin Description ( DFN5X6-8L ) Features 40V/18A,RDS(ON)=14mΩ@VGS=10V 40V/15A,RDS(ON)=16mΩ@VGS=4.5V Super high density c.

AFN7938AS, Dual N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commerc.

AFN7960AS

AFN7978AS

AFN7002AS

AFN7002DS

AFN7002ES

AFN7002KAS

AFN7002LDS

AFN7002LKAS

AFN7106S

AFN7308S

AFN7400

AFN7402

AFN7412

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts