z 40V/18A,RDS(ON)=9mΩ@VGS=10V z 40V/15A,RDS(ON)=11mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC curre.

Pin Description ( DFN5X6-8L ) Features z 40V/18A,RDS(ON)=9mΩ@VGS=10V z 40V/15A,RDS(ON)=11mΩ@VGS=4.5V z Super high dens.

AFN5853AS, Dual N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commerc.

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AFN1024

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