AFN501DEA mosfet equivalent, n-channel depletion mode power mosfet.
600V/16mA,RDS(ON)=700Ω@VGS=10V 600V/3mA,RDS(ON)=700Ω@VGS=4.5V Depletion-mode ( Normally-on) Improved ESD ability Fast switching Improved dv/dt capability SOT-23 package d.
AFN501DEA is an N-channel depletion-mode Power MOSEFT which is produced using VDMOS technology. The improved planar stripe cell have been especially tailored to minimize on-state resistance, provide superior switching performance.
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