20V/8.0A,RDS(ON)=19mΩ@VGS=10V 20V/7.0A,RDS(ON)=20mΩ@VGS=4.5V 20V/6.0A,RDS(ON)=24mΩ@VGS=2.5V 20V/4.5A,RDS(ON)=28mΩ@VGS=1.8V Super high density cell design for extremely lo.

Pin Description ( DFN2X5-6L ) AFN5800W 20V N-Channel Enhancement Mode MOSFET Features 20V/8.0A,RDS(ON)=19mΩ@VGS=10V 20.

AFN5800W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other ba.

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