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AFN5800W - N-Channel MOSFET

Download the AFN5800W datasheet PDF. This datasheet also covers the AFN5800W-Alfa variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

AFN5800W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • 20V/8.0A,RDS(ON)=19mΩ@VGS=10V 20V/7.0A,RDS(ON)=20mΩ@VGS=4.5V 20V/6.0A,RDS(ON)=24mΩ@VGS=2.5V 20V/4.5A,RDS(ON)=28mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability DFN2X5-6L package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN5800W-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN5800W
Manufacturer Alfa-MOS
File Size 598.67 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN5800W Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
AFN5802S 80V N-Channel Enhancement Mode MOSFET
AFN5808W N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFN5800W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN2X5-6L ) AFN5800W 20V N-Channel Enhancement Mode MOSFET Features 20V/8.0A,RDS(ON)=19mΩ@VGS=10V 20V/7.0A,RDS(ON)=20mΩ@VGS=4.5V 20V/6.0A,RDS(ON)=24mΩ@VGS=2.5V 20V/4.5A,RDS(ON)=28mΩ@VGS=1.
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