z 40V/20A,RDS(ON)= 8.5mΩ@VGS=10V z 40V/15A,RDS(ON)= 9.5mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z TO-252-2L package design Application z L.

Pin Description ( TO-252-2L ) AFN5008S 40V N-Channel Enhancement Mode MOSFET Features z 40V/20A,RDS(ON)= 8.5mΩ@VGS=10V.

AFN5008S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

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