AFN4486W datasheet, mosfet equivalent, Alfa-MOS

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Features and benefits

20V/ 9A,RDS(ON)=14mΩ@VGS=4.5V 20V/ 7A,RDS(ON)=17mΩ@VGS=2.5V 20V/ 5A,RDS(ON)=21mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) SOP-8P package design .

Application

Pin Description ( SOP-8P ) AFN4486W 20V N-Channel Enhancement Mode MOSFET Features 20V/ 9A,RDS(ON)=14mΩ@VGS=4.5V 20V/ .

Description

AFN4486W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

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