60V/4.6A,RDS(ON)=35mΩ@VGS=10V 60V/4.2A,RDS(ON)=42mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application Motor and Load C.

Pin Description ( SOP-8P ) AFN4436WS 60V N-Channel Enhancement Mode MOSFET Features 60V/4.6A,RDS(ON)=35mΩ@VGS=10V 60V/.

AFN4436WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial i.

AFN4412W

AFN4422W

AFN4424W

AFN4440W

AFN4486W

AFN4048WS

AFN4056WS

AFN4058WS

AFN4062S

AFN4116WS

AFN4124WS

AFN4126S

AFN4134W

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