30V/ 6.8A,RDS(ON)=36mΩ@VGS=10V 30V/ 6.0A,RDS(ON)=40mΩ@VGS=4.5V 30V/ 5.2A,RDS(ON)=45mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) SOP-8P package de.

Pin Description ( SOP-8P ) AFN4422W 30V N-Channel Enhancement Mode MOSFET Features 30V/ 6.8A,RDS(ON)=36mΩ@VGS=10V 30V/.

AFN4422W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

AFN4424W

AFN4412W

AFN4436WS

AFN4440W

AFN4486W

AFN4048WS

AFN4056WS

AFN4058WS

AFN4062S

AFN4116WS

AFN4124WS

AFN4126S

AFN4134W

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