20V/ 14A,RDS(ON)=14mΩ@VGS=4.5V 20V/ 12A,RDS(ON)=18mΩ@VGS=2.5V 20V/ 10A,RDS(ON)=30mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) DFN3X3-8L package d.

Pin Description ( DFN3X3-8L ) AFN3814W 20V N-Channel Enhancement Mode MOSFET Features 20V/ 14A,RDS(ON)=14mΩ@VGS=4.5V 2.

AFN3814W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

AFN3806W

AFN3006S

AFN3009S

AFN3015S

AFN3016S

AFN3019S

AFN3025S

AFN3030

AFN3302W

AFN3306WS

AFN3309WS

AFN3310W

AFN3316W

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