* 30V/45A,RDS(ON)=6mΩ@VGS=10V
* 30V/30A,RDS(ON)=9mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS (ON)
* TO-252-2L package design Appli.

Pin Description ( TO-252-2L ) AFN3016S 30V N-Channel Enhancement Mode MOSFET Features
* 30V/45A,RDS(ON)=6mΩ@VGS=10.

AFN3016S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

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AFN3334WS

AFN3400A

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